product standards mos fet mtm231232lbf ? absolute maximum ratings ta = 25 ? c note *1 pulse width ? 10 ? s, duty cycle ? 1 % *2 measuring on ceramic board at 40 mm ? 38 mm ? 0.1 mm. absolute maximum rating pd non-heat sink shall be made 150 mw. page 150 parameter -3 -16 500 vds -20 gate to source voltage vgs ? 10 mtm231232lbf silicon p-channel mosfet ? features ? for switching low drain-source on-state resistance : rds(on) typ. = 40 m ? (vgs = -4 v) mtm76123 in smini3 type package 1of6 unit : mm 2. source smini3-g1-b sc-70 code jeita gate halogen-free / rohs compliant ? marking symbol : bl ? packaging embossed type (thermo-compression sealing) : 3 000 pcs / reel (standard) ? c (eu rohs / ul-94 v-0 / msl : level 1 compliant) ? 1. channel temperature tch storage temperature range -55 to +150 mw internal connection a ? c gate 2. source 3. drain pin name sot-323 panasonic 3. drain drain current id idp drain current (pulsed) *1 tstg total power dissipation *2 pd 1. v v a ? low drive voltage : 2.5 v drive symbol rating unit drain to source voltage 1 2 3 2.1 2.0 0.9 1.25 1.3 0.3 (0.65) 0.15 12 3 (0.65) d o c n o . t t4 - ea - 14177 r e v i sio n . 2 e s t a b li s h e d : 2012 - 04 - 21 r e v i s e d : 2013 - 03 - 07
product standards mos fet mtm231232lbf ? electrical characteristics ta = 25 ? c ? 3 ? c note measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. *1 pulse test : pulse width ? 300 ? s, duty cycle ? 2 % *2 measurement circuit for turn-on delay time / rise time / turn-off delay time / fall time page fall time *2 tf 70 turn-off delay time *2 td(off) 120 vdd = -10 v, vgs = -4 to 0 v id = -1 a turn-on delay time *2 td(on) 25 vdd = -10 v, vgs = 0 to -4 v id = -1 a rise time *2 tr 25 zero gate voltage drain current idss gate-source threshold voltage vth id = -1 ma, vds = -10 v drain-source on-state resistance *1 40 45 gate-source leakage current igss vgs = ? 8 v, vds = 0 v v -1 vds = -20 v, vgs = 0 v ? a vdss id = -1 ma, vgs = 0 v -20 6 parameter symbol conditions min typ max unit drain-source breakdown voltage rds(on)2 id = -0.5 a, vgs = -2.5 v 2of 70 m ? crss 120 rds(on)1 -0.4 id = -1 a, vgs = -4 v 3.5 ? 10 -0.85 -1.3 55 input capacitance ciss vds = -10 v, vgs = 0 v f = 1 mhz forward transfer admittance *1 output capacitance coss |yfs| id = -1 a, vds = -10 v, f = 1 khz reverse transfer capacitance 1 000 120 ? a ns ns s pf v d o c n o . t t4 - ea - 14177 r e v i sio n . 2 e s t a b li s h e d : 2012 - 04 - 21 r e v i s e d : 2013 - 03 - 07
product standards mos fet mtm231232lbf *2 measurement circuit for turn-on delay time / rise time / turn-off delay time / fall time page 3 of 6 90 % 10 % 10 % 90 % 0 v -4 v pw = 10 ? s d.c. ? 1 % vdd = -10 v id = -1 a rl = 10 ? d o c n o . t t4 - ea - 14177 r e v i sio n . 2 e s t a b li s h e d : 2012 - 04 - 21 r e v i s e d : 2013 - 03 - 07
product standards mos fet mtm231232lbf technical data ( reference ) page dynamic input/output characteristics 4of6 capacitance - vds id - vds id - vgs vds - vgs rds(on) - id -0.01 -0.008 -0.006 -0.004 -0.002 0 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 gate-source voltage vgs (v) drain current id (a) ta = 85 ? c -30 ? c 25 ? c -10 -8 -6 -4 -2 0 0 5 10 15 20 25 30 total gate charge qg (nc) gate-source voltage vgs (v) vdd = -10 v -0.5 -0.4 -0.3 -0.2 -0.1 0 -6 -5 -4 -3 -2 -1 0 gate-source voltage vgs (v) drain-source voltage vds (v) id = -2 a -1 a -0.5 a 10 100 -0.1 -1 drain current id (a) drain-source on-state resistance rds(on) (m ? ) -4 v vgs = -2.5 v -3 -2.5 -2 -1.5 -1 -0.5 0 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 drain-source voltage vds (v) drain current id (a) -1.5 v -2 v -2.5 v -4 v vgs = -1 v 10 100 1000 10000 -0.1 -1 -10 -100 drain-source voltage vds (v) capacitance c (pf) ciss coss crss d o c n o . t t4 - ea - 14177 r e v i sio n . 2 e s t a b li s h e d : 2012 - 04 - 21 r e v i s e d : 2013 - 03 - 07
product standards mos fet mtm231232lbf technical data ( reference ) page 5 of rth - tsw 6 vth - ta rds(on) - ta pd - ta safe operating area 0 -0.5 -1 -50 0 50 100 150 temperature ta ( ? c) gate-source threshold voltage vth (v) 0 10 20 30 40 50 60 70 -50 0 50 100 150 temperature ta ( ? c) drain-source on-state resistance rds(on) (m ? ) -4 v vgs = -2.5 v 0 0.2 0.4 0.6 0.8 0 50 100 150 temperature ta ( ? c) total power dissipation pd (w) measuring on ceramic substrate at (40 mm ? 38 mm ? 0.1 mm) non-heat sink 10 100 1000 0.1 1 10 100 1000 pulse width tsw (s) thermal resistance rth ( ? c/w) -0.001 -0.01 -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 -100 drain-source voltage vds (v) drain current id (a) idp = -16 a operation in this area is limited by rds(on) ta = 25 ? c, glass epoxy board (25.4 ? 25.4 ? 0.8 mm) coated with copper foil,which has more than 300 mm 2 . 10 ms 100 ms 1 ms 1 s dc d o c n o . t t4 - ea - 14177 r e v i sio n . 2 e s t a b li s h e d : 2012 - 04 - 21 r e v i s e d : 2013 - 03 - 07
product standards mos fet mtm231232lbf unit : mm page 6 smini3-g1-b ? 6of land pattern (reference) (unit : mm) 0.8 0.9 1.9 1.3 0.3 +0.1 0.0 2.1 0.1 1.25 0.10 0.15 +0.10 -0.05 0 to 0.1 1.3 0.1 2.0 0.2 (0.425) (0.65) (0.65) 0.2 0.1 0.9 +0.2 -0.1 0.9 0.1 (8) (10) 12 3 d o c n o . t t4 - ea - 14177 r e v i sio n . 2 e s t a b li s h e d : 2012 - 04 - 21 r e v i s e d : 2013 - 03 - 07
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